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IXTH 36N50P IXTQ 36N50P IXTT 36N50P
IXTV36N50P IXTV 36N50PS
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V DS = 20 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = I D25
R G = 3 ? (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
23
36
5500
510
40
25
27
75
21
85
30
31
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
R thJC
0.23 ° C/W
R thCS
(TO-247 and TO-3P)
(PLUS220)
0.21
0.21
° C/W
° C/W
Source-Drain Diode
Characteristic Values
Symbol
Test Conditions
(T J = 25 ° C unless otherwise specified)
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 25 A, -di/dt = 100 A/ μ s
V R = 100 V, V GS = 0 V
400
36
108
1.5
A
A
V
ns
Characteristic Curves
36
Fig. 1. Output Char acte r is tics
@ 25 o C
80
Fig. 2. Exte nde d Output Char acte r is tics
@ 25 o C
32
28
24
20
V GS = 10V
8V
7V
6V
70
60
50
V GS = 10V
8V
7V
6.5V
40
16
12
8
4
0
5.5V
5V
30
20
10
0
6V
5.5V
5V
0
1
2
3 4
V D S - V olts
5
6
7
0
2
4
6
8
10 12 14
V D S - V olts
16
18
20
22
24
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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